| PART |
Description |
Maker |
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| TMP95C265 E_030331_95CS64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| TMP95C061B E_030331_95C061B_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| 2SK1942-01 |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| FQPF9N90C FQPF9N90CT FQP9N90C |
N-Channel QFETMOSFET 900V, 8A, 1.4
N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm
|
Fairchild Semiconductor
|
| 2SK2768-01L 2SK2654-01 2SK2647-01MR |
3.5 A, 900 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15
|
|
| 9N90 |
900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| NDS352APD87Z |
900 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| STD2NK90Z06 STD2NK90Z-1 STD2NK90ZT4 STP2NK90Z |
N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET
2.1 A, 900 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
STMicroelectronics
|
| IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
|
